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黄明亮
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教授   博士生导师   硕士生导师

性别: 男

毕业院校: 大连理工大学

学位: 博士

所在单位: 材料科学与工程学院

学科: 材料学. 功能材料化学与化工. 化学工程

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Effects of temperature and current density on (Au, Pd, Ni)Sn4 redistribution and Ni-P consumption in Ni/Sn3.0Ag0.5Cu/ENEPIG flip chip solder joints

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论文类型: 会议论文

发表时间: 2013-08-11

收录刊物: EI、Scopus

页面范围: 1064-1069

摘要: The Ni/Sn-3.0Ag-0.5Cu/ENEPIG solder joints were used to investigate the effects of temperature and current density on (Au, Pd, Ni)Sn4 redeposition and Ni-P consumption during electromigration (EM). In as-soldered state, (Cu, Ni)6Sn5 type IMCs formed at both the Sn3.0Ag0.5Cu/Ni and Sn3.0Ag0.5Cu/Ni-P interfaces. Temperature and current density played an important role in (Au, Pd, Ni)Sn4 redeposition and Ni-P consumption. When the solder joints were applied with lower current density (0.9  103 A/cm2) at lower temperature (85   C), no obvious Ni-P consumption observed. (Au, Ni, Pd)Sn4 particles still formed in the solder even after EM for 200 h, no (Au, Ni, Pd)Sn4 particle was observed at both cathode and anode interfaces. When the solder joints were applied with higher current density (1.0  104 A/cm2) at higher temperatures (150 and 180   C), the (Au, Ni, Pd)Sn4 phases preferred to redeposition only at the anode interface while no (Au, Ni, Pd)Sn4 was detected at the cathode interface; Ni-P consumption was significantly affected by current direction, i.e., when the Ni-P layer was the cathode side, the consumption of Ni-P was significantly enhanced; when the Ni-P layer was the anode side, no obvious Ni-P consumption was observed. ? 2013 IEEE.

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