点击次数：

论文类型： 期刊论文

发表时间： 2010-08-20

发表刊物： JOURNAL OF ALLOYS AND COMPOUNDS

收录刊物： SCIE、EI、Scopus

卷号： 504

期号： 2

页面范围： 535-541

ISSN号： 0925-8388

关键字： Electromigration; Cu/Sn/Cu interconnect; Interfacial reaction; Intermetallic compound

摘要： The line-type Cu/Sn/Cu interconnects were used to determine the growth kinetics of interfacial intermetallic compounds (IMCs) under current densities ranging from 5.0 x 10(3) to 1.0 x 10(4) A/cm(2) at 100 and 150 degrees C, respectively. EM caused a polarity effect, i.e., the IMCs at the anode side were thicker than those at the cathode side. Compared with the aging specimens, the growth kinetics of the IMCs at the anode side during EM was significantly enhanced and still followed the t(1/2) law. The growth behavior of the IMCs at the cathode side was complicated. A growth model of the IMC at the cathode side was established. When the initial interfacial IMCs were very thin, J(dis) was minute compared with J(em) + J(chem). The inward fluxes were larger than the outward fluxes, and thus the IMCs grew. After the IMCs reached a critical thickness, J(dis) became lager than J(em) + J(chem). The inward fluxes were less than the outward fluxes, and thus the IMCs decreased in thickness. (C) 2010 Elsevier B.V. All rights reserved.