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论文类型：会议论文

发表时间：2008-04-16

收录刊物：EI、Scopus

页面范围：987-991

摘要：Experiment of bending silicon with Nd:YAG laser of millisecond pulse width is implemented. By the experiment, the influence of frequency and pulse width on the bending angle is investigated and degradation of angle is not occurred. And then the bending silicon surface properties such as the profile and crystal phase are detected by optical microscope and Raman spectrum and so on. The results indicated that the irradiated surface is distributed to fringe region, transition region and main irradiated region. With analyzed results, the surface of transition region appeared the massive stacking fault and main irradiated region is changed obviously, and the tiny transformation of Si-III is found in Raman spectrum of main irradiated region compared to the un-irradiated region. Meanwhile slip line appears in fringe region. Finally, temperature distribution of silicon during process of laser bending is analyzed. The calculated results indicated that the sharp temperature shake is existent during process of scanning. In the later process of scannings, Temperature Gradient Mechanism (TGM) and Buckling Mechanism (BM) are proved to co-exist as well as the temperature increment is decreasing as the increase of scanning numbers and finally the temperature distribution is hardly changing, and the dislocation could influence on the process of bending.