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发表时间：2008-01-01

发表刊物：光学精密工程

所属单位：机械工程学院

期号：4

页面范围：605-610

ISSN号：1004-924X

摘要：A new method for pulsed laser bending of single-crystal silicon was presented. An analytical model was developed to describe the spatial-time characteristics of pulsed laser, and the Finite Element Method (FEM) software ANSYS was used for simulating the laser bending process to predict the temperature field and stress-strain field in the bending process. The periodic transformations of temperature field and stress-strain distribution during pulsed laser scanning silicon sheet were analyzed. The research results indicate that the mechanism of pulsed laser bending silicon is a composite mechanism, rather than a simplex mechanism of Temperature Mechanism (TM) or Bucking Mechanism (BM). A bending experiment for silicon sheet was carried out by scanning 6 times with pulsed laser, the final bending angle is 6.5°. The simulation results are well agreement with the experiments.

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