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论文类型：会议论文

发表时间：2015-08-11

收录刊物：EI、CPCI-S、Scopus

页面范围：1275-1278

关键字：Electromigration; beta-Sn; Grain orientation; Dissolution; Intermetallic compounds

摘要：Effect of electro migration (EM) on microstructural evolution of the Cu/Sn3.0Ag0.5Cu/Cu line-type interconnect was in situ investigated. It is interesting to note that Sn grain orientation was becoming the most crucial factor to dominate the EM behavior of downsizing bumps. When the c-axis of beta-Sn grain was parallel to the electron flow direction, a larger EM flux was induced from the cathode toward the anode, resulting in the excessive dissolution of Cu occurred at the cathode and a thick Cu-Sn intermetallic compounds (IMCs) layer formed at the anode. Instead, when the c-axis of beta-Sn grain was perpendicular to the electron flow direction, EM would be retarded due to the lower Cu diffusion flux. No evident dissolution or symmetrical growth IMCs was found at either interface. The mechanism of the effect of beta-Sn grain orientation on the microstructural evolution undergoing EM was discussed from the diffusion flux point of view.