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论文类型：会议论文

发表时间：2012-08-13

收录刊物：EI、CPCI-S、Scopus

页面范围：1399-1402

摘要：The line-type Cu/Sn/Cu and Cu/Sn/Ni interconnects were used to investigate the dissolution of substrates under a current density of 2.0x10(4) A/cm(2) at 150 degrees C for 50 h, 100 h and 200 h. For comparison, the line-type Cu/Sn/Cu and Cu/Sn/Ni interconnects were also aged at 150 degrees C for 50h, 100 h and 200 h. According to the experimental results, as the cathodes, no matter Cu or Ni, the dissolution of substrates in both Cu/Sn/Cu and Cu/Sn/Ni interconnects was in linear relationship with time. The dissolution rate of the Cu cathodes in Cu/Sn/Cu interconnects was approximately equal to that in Cu/Sn/Ni interconnects, indicating that the anode material had little effect on the dissolution of Cu cathodes. While in Cu/Sn/Ni interconnects, the Cu substrates dissolved more easily than the Ni substrates under the same conditions, i.e., Ni had a better electromigration (EM) resistance than Cu.