Effect of substrate temperature on the growth of polycrystalline Si films deposited with SiH4+Ar

Release Time:2019-03-12  Hits:

Indexed by: Journal Article

Date of Publication: 2009-01-01

Journal: J. Mater. Sci. Technol.

Volume: 24

Issue: 4

Page Number: 489-491

Prev One:ECR-PECVD制备纳米硅颗粒薄膜

Next One:Fabrication and its characteristics of low-temperature polycrystalline silicon thin films