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发布时间：2019-03-11

论文类型：会议论文

发表时间：2010-06-26

收录刊物：Scopus、CPCI-S、EI

卷号：675-677

页面范围：1275-1278

关键字：Transparent conducting oxide (TCO); Al-doped ZnO (ZnO:Al); Sputtering; solar cell

摘要：ZnO:Al thin films were deposited on glass substrates by r. f. magnetron sputtering. The crystal structures were characterized using X-ray diffraction. The electrical property and the light transmission of the ZnO:Al thin films were investigates utilizing Hall system and UVNis/NIR spectrophotometer. The results show that the ZnO:Al thin films prepared with the sputtering power of 100W, working pressure of 0.3Pa and substrate temperature of 250 degrees C have the resistivity as low as 3.1 x 10(-3) Omega.cm and transmittance over 90% in visible region. From the GIXRD patterns, higher electrical conductivity is related to the higher ratio of I-(10)(2)/I-(002), which is a new reasonable structure parameter to estimate the electrical property of ZnO:Al thin films.