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论文类型： 会议论文

发表时间： 2010-06-26

收录刊物： EI、CPCI-S、SCIE、Scopus

卷号： 675-677

页面范围： 1287-1290

关键字： P-type doping; mu c-Si:H film; ECR-PECVD; Hall

摘要： P-type microcrystalline silicon films prepared by electron cyclotron resonance (ECR) PECVD are studied here. Silane diluted with Ar (SiH4/Ar=1/19) is used as a source gas and diborane (B2H6) diluted with H-2 (100ppm) as doping gases. The effect of flow rate of doping gas on the microstructures and electrical properties of the films were investigated. Raman spectroscopy and X-ray diffraction were used to determine the film structure; AFM was employed to characterize the film surface topography; Hall measurements were carried out on the doped films to determine the carrier type, carrier concentration, and Hall mobility. The optical quality was measure by transmission spectrum.