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论文类型： 期刊论文

发表时间： 2011-06-01

发表刊物： THIN SOLID FILMS

收录刊物： SCIE、EI

卷号： 519

期号： 16

页面范围： 5577-5581

ISSN号： 0040-6090

关键字： Zinc oxide; Transparent conducting oxide; Crystal structure; Magnetron sputtering

摘要： Al-doped ZnO thin films were deposited by radio frequency magnetron sputtering using a ZnO target with 2 wt.% Al(2)O(3). The structures and properties of the films were characterized by the thin film X-ray diffraction, high resolution transmission electron microscopy, Hall system and ultraviolet/visible/near-infrared spectrophotometer. The Al-doped ZnO film with high crystalline quality and good properties was obtained at the sputtering power of 100 W, working pressure of 0.3 Pa and substrate temperature of 250 degrees C. The results of further structure analysis show that the interplanar spacings d are enlarged in other directions besides the direction perpendicular to the substrate. Apart from the film stress, the doping concentration and the doping site of Al play an important role in the variation of lattice parameters. When the doping concentration of Al is more than 1.5 wt.%, part of Al atoms are incorporated in the interstitial site, which leads to the increase of lattice parameters. This viewpoint is also proved by the first principle calculations. (C) 2011 Elsevier B.V. All rights reserved.