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论文类型： 期刊论文

发表时间： 2010-02-19

发表刊物： NANOTECHNOLOGY

收录刊物： SCIE、EI、Scopus

卷号： 21

期号： 7

ISSN号： 0957-4484

摘要： High-quality, crystalline AlN whiskers with large yield have been synthesized through the direct nitridation of Al vapor at high temperature. The AlN whiskers exhibited a strong and uniform ultraviolet emission at similar to 352 nm, which is notably shorter compared with the wavelength of previously reported one-dimensional AlN nanostructures. Energy filtered transmission electron microscope (TEM) analyses indicated that nitrogen deficiency and rather lower oxygen content in the AlN lattice might be responsible for the strong 352 nm ultraviolet emission.