Indexed by:期刊论文

Date of Publication:2006-08-01

Journal:SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Included Journals:SCIE、EI、Scopus

Volume:21

Issue:8

Page Number:1090-1093

ISSN No.:0268-1242

Abstract:ZnO:P/n(+)-Si heterostructures were fabricated on n(+)-Si substrates by metalorganic chemical vapour deposition. The substrates were heavily doped with phosphorus. The crystallinity and optical properties of ZnO films were characterized by photoluminescence spectra and x-ray diffraction, respectively. X-ray photoelectron spectroscopy (XPS) showed that phosphorus atoms existed in ZnO films. The current-voltage (I-V) curve showed current rectification characteristic behaviour.