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论文类型：期刊论文

发表时间：2017-10-01

发表刊物：JOURNAL OF ELECTRONIC MATERIALS

收录刊物：Scopus、SCIE、EI

卷号：46

期号：10

页面范围：6111-6118

ISSN号：0361-5235

关键字：Wafer-level package; hermetic sealing; Cu/Sn TLP bonding; intermetallic compound; aging test

摘要：In this paper, a wafer-level package with hermetic sealing by low-temperature Cu/Sn transient liquid phase (TLP) bonding for a micro-electromechanical system was introduced. A Cu bump with a Sn cap and sealing ring were fabricated simultaneously by electroplating. The model of Cu/Sn TLP bonding was established and the thicknesses of Cu and Sn were optimized after a series of bonding experiments. Cu/Sn wafer-level bonding was undertaken at 260A degrees C for 30 min under a vacuum condition. An average shear strength of 50.36 MPa and a fine leak rate of 1.9 x 10(-8) atm cc/s were achieved. Scanning electron microscope photos of the Cu/Sn/Cu interlayers were presented, and energy dispersive x-ray analysis was conducted simultaneously. The results showed that the Sn was completely consumed to form the stable intermetallic compound Cu3Sn. An aging test of 200 h at 200A degrees C was conducted to test the performance of the hermetic sealing, while the results of shear strength, fine leak rate and bonding interface were also set out.