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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
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- [1]刘起蕊.王德君.崔鹏飞,胡灿博,曲德浩.偏压温度应力下SiC MOSFET器件可靠性劣化的物理机制[J],微电子学,2025,55(04):669-677
- [2]谢威威.李月,秦福文,王德君.白娇.Interface characteristic and performance optimization mechanism for HfOx-based RRAM devices[J],Applied Surface Science,2024,680
- [3]Qian, Qiyuan.Wan, Hanlin,Zheng, Yao,Ma, Haiyan,Wang, Qian,Cai, Jian,王德君.An Insertion-Based Mechanical Interlock Cu-Sn Bonding Structure for Three-Dimensional Integration[A],2024 25th International Conference on Electronic Packaging Technology, ICEPT 2024,2024
- [4]Ma, Yujie.Zhang, Yuan,苏艳,王德君.刘涵,崔鹏飞.拉伸应变下 SiC/SiO2近界面碳缺陷的结构和电学特性演变[J],Research and Progress of Solid State Electronics,2024,44(3):206-212
- [5]张圆.尉升升,苏艳,王德君.丁攀.偏压应力下 SiC/SiO2界面间隙碳缺陷的结构和电学性质演变[J],Research and Progress of Solid State Electronics,2024,43(3):208-213
- [6]白娇.Wei, Shengsheng,Li, Yue,秦福文,Ji, Min,王德君.谢威威,曲德浩.Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO(x)-based RRAM devices.[J],Nanotechnology,34(23)
- [7]Wei, Shengsheng.秦福文,Su, Yan,王德君.尹志鹏,白娇,谢威威.The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations[J],Applied Surface Science,614
- [8]Wei, Shengsheng.Su, Yan,秦福文,王德君.白娇,谢威威.Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces[J],ACS Applied Materials and Interfaces,15(14):18537-18549
- [9]刘道森.Wei, Shengsheng,Liu, Chao,王德君.The study on the high-temperature performances of a graphene MEMS pressure sensor[J],Journal of Materials Science: Materials in Electronics,34(9)
- [10]Wei, Shengsheng.Su, Yan,秦福文,王德君.白娇,谢威威.Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces.[J],ACS applied materials & interfaces,15(14):18537-18549