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论文类型：会议论文

发表时间：2010-01-01

收录刊物：Scopus

摘要：A novel RF SOI LDMOS with buried P-type layer (BPL) was proposed for improvement of its forward block characteristic. The proposed BPL RF SOI LDMOS consists of an additional buried P-type layer inserted between buried oxide layer and N-drift region based on the conventional RF SOI LDMOS structure. When the proposed Device lies in forward block state, the junction across the interface between N-drift region and buried P-type layer is reverse biased, which bears the vertical forward voltage drop instead of thick BOX. It was proved by process and device simulations with Silvaco TCAD that the BPL RF SOI LDMOS is benefit not only to improve its breakdown voltage but also to thin buried oxide. ?2010 IEEE.