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论文类型：期刊论文

发表时间：2014-02-01

发表刊物：Journal of Semiconductors

收录刊物：EI、ISTIC、Scopus

卷号：35

期号：2

ISSN号：16744926

摘要：The effects of wet re-oxidation annealing (wet-ROA) on the shallow interface traps of n-type 4H-SiC metal - oxide - semiconductor (MOS) capacitors were investigated by Gray - Brown method and angle-dependent X-ray photoelectron spectroscopy technique. The results present the energy distribution of the density of interface traps (D) from 0 to 0.2 eV below SiC conduction band edge (E) of the sample with wet-ROA for the first time, and indicate that wet-ROA could reduce the D in this energy range by more than 60%. The reduction in D is attributed to the reaction between the introduced oxygen and the SiOC species, which results in C release and SiOC transformation into higher oxidation states, thus reducing the SiOC content and the SiOC interface transition region thickness. ? 2014 Chinese Institute of Electronics.