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发表时间：2022-10-06

发表刊物：电子工业专用设备

卷号：41

期号：10

页面范围：6-10

ISSN号：1004-4507

摘要：Copper filling for 40 μm Through Silicon Via (TSV) had been investigated in this paper. Fully filled TSV with diameter of 40 μm, depth of 180μm had been achieved by fine-tuning parameters of the electroplating process. Effect of current density on copper filling was studied at the condition where seed layer deposition and plating solution were kept constant. The optimized current density was found to be 1 ASD. Then various pretreatment processes of electroplating, such as ultrasonic cleaning, deionized water flushing and vacuuming had been analyzed in detail with the same current density. Comparison experiments showed vacuuming pretreatment method resulted in good copper filling, because voids in silicon via could be removed effectively by this approach. By adopting vacuuming pretreatment and applying the current density of 1 ASD, copper filling ratio is close to 100%.

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