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发表时间：2022-10-06

发表刊物：固体电子学研究与进展

卷号：35

期号：2

页面范围：191

ISSN号：1000-3819

摘要：Reliability of SiC MOS oxide layer is a crucial problem in the research
   of SiC MOS devices. Effects of electron cyclotron resonance (ECR)
   nitrogen plasma post-oxidation annealing (POA) on the breakdown
   characteristics of the dielectric layer in 4H-SiC MOS structures were
   investigated by using stepped-current time-dependent dielectric
   breakdown technique and X-ray photoelectro spectroscope XPS analysis.
   Samples beingprocessed for 8 minutes achieved the best results that is,
   the time to breakdown and charge to breakdown increased greatly, and the
   proportion of early failures also decreased. The results show that for
   an appropriate time, ECRnitrogen plasma POA process could effectively
   lower the density of interface traps, resulting in a higher enthalpy of
   activation, which in turn improves the ability to sustain current
   stress.

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