大连理工大学主页平台管理系统王德君--DUT王德君-- Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors

论文成果

Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors

上一条： First-principles study of advanced nuclear materials: Defect behavior and fission products in U-Si system

下一条： Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer

王德君 var u_u6_pic = new ImageScale("u_u6_",140,140,true,true);u_u6_pic.addimg("/_resources/group1/M00/00/20/ynZMg18RfnqAKGSmAAFeUsXExQg049.jpg","","王德君","7970");