点击次数：

论文类型：期刊论文

发表时间：2015-10-01

发表刊物：SENSORS

收录刊物：SCIE、EI、PubMed、Scopus

卷号：15

期号：10

页面范围：27359-27373

ISSN号：1424-8220

关键字：monolithic Hall sensor; sensitivity and linearity; Hall offset; dynamic offset cancellation technique

摘要：This paper presents a fully integrated linear Hall sensor by means of 0.8 m high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to +/- 2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from +/- 5 mT to +/- 175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.