点击次数：

论文类型：期刊论文

发表时间：2015-07-01

发表刊物：SEMICONDUCTOR SCIENCE AND TECHNOLOGY

收录刊物：SCIE、EI、Scopus

卷号：30

期号：7

ISSN号：0268-1242

关键字：self-aligned gate; GaN MOSFET; inductively coupled plasma; low-temperature Ohmic

摘要：We report a new approach in fabricating a self-aligned gate GaN MOSFET. The fabrication technique is based on a double-layer photoresist (PR) and low-temperature-Ohmic formation process assisted by an inductively coupled plasma (ICP) dry etching process. In this process, the active region was automatically defined by the combination of a subsequently developed positive PR and the existing negative PR pattern. The Al Ohmic electrodes on the ICP-treated active region were formed by a lift-off process followed by 500 degrees C N-2 1 min annealing. The specific contact resistance of 4.8 x 10(-6) Omega cm(2) was obtained in this process. Operation up to a gate bias of 30 V was confirmed. The maximum output current of 98 mA mm(-1) and field-effect mobility of 110 cm(2) V-1 s(-1) were observed in the device with a gate length of 4 mu m. Some non-ideal effects in this device, including the negative threshold voltage, larger off-state leakage and unsaturated on-state drain current, were also observed and analyzed. Some possible ways to improve the performance of the device were proposed.