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论文类型：期刊论文

发表时间：2015-05-28

发表刊物：JOURNAL OF APPLIED PHYSICS

收录刊物：SCIE、EI、Scopus

卷号：117

期号：20

ISSN号：0021-8979

摘要：The barrier characteristics of Pt contacts to relatively highly doped (similar to 1 x 10(18) cm(-3)) 4H-SiC were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 160-573 K. The barrier height and ideally factor estimated from the I-V characteristics based on the thermionic emission model are abnormally temperature-dependent, which can be explained by assuming the presence of a double Gaussian distribution (GD) of inhomogeneous barrier heights. However, in the low temperature region (160-323 K), the obtained mean barrier height according to GD is lower than the actual mean value from C-V measurement. The values of barrier height determined from the thermionic field emission model are well consistent with those from the C-V measurements, which suggest that the current transport process could be modified by electron tunneling at low temperatures. (c) 2015 AIP Publishing LLC.