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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process
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论文类型：期刊论文
发表时间：2015-04-01
发表刊物：APPLIED PHYSICS EXPRESS
收录刊物：SCIE、EI、Scopus
卷号：8
期号：4
ISSN号：1882-0778
摘要：We report on a gate-first GaN metal-oxide-semiconductor field-effect transistor (MOSFET) based on a non-annealing ohmic process. The device was formed on an n(+)-GaN (30 nm, 1 x 10(19) cm(-3))/semi-insulating GaN wafer. The source and drain (Ti/Al/Ti/Au) were deposited after the contact region was treated using an inductively coupled plasma (ICP) dry etching system. Ohmic contact with a contact resistance of 0.48 Omega mm was realized at room temperature. A device fabricated by a gate-first process shows good pinch-off characteristics and a maximum field-effect mobility of 163.8 cm(2)V(-1)s(-1). (C) 2015 The Japan Society of Applied Physics