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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing
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论文类型：期刊论文
发表时间：2013-08-05
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI、Scopus
卷号：103
期号：6
ISSN号：0003-6951
摘要：We proposed an electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing process for SiO2/4H-SiC interface and investigated its effect on the electrical properties of the interface. The results indicate that this process could significantly reduce the density of interface traps (D-it) without degrading the oxide insulating properties. The best result is achieved for the 10-min annealed sample. The N and H, which are only concentrated at the SiO2/SiC interface, both play roles in reducing the D-it. N is more effective in passivating the shallow interface traps, while H is more effective in passivating the deep interface traps. (C) 2013 AIP Publishing LLC.