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论文类型：期刊论文

发表时间：2013-07-15

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：103

期号：3

ISSN号：0003-6951

摘要：We investigated the Schottky barrier of Pt/4H-SiC contact as a function of 4H-SiC surface properties which effectively controlled by electronic cyclotron resonance hydrogen plasma pretreatment for different periods and annealing. It is found that the effective barrier height monotonically increases with decreasing the degree of Fermi level pinning. Electrically homogeneous contacts are observed when the Fermi level (FL) is "pinned (Bardeen limit)" and "free-pinned (Schottky limit)." However, a partial pinning of FL leads to Gaussian distribution of inhomogeneous barrier height. These results could be correlated with changes in the magnitude and spatial distribution of surface state density after different pretreatments. (C) 2013 AIP Publishing LLC.