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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
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- [21]王晓琳, 刘冰冰, 秦福文, 王德君.氮氢混合等离子体处理对SiC MOS电容可靠性的影响[J],固体电子学研究与进展,2022,36(1):71-77
- [22]刘沙沙, 秦福文, 朱巧智, 刘冰冰, 汤斌, 王德君.氮钝化SiC MOS界面特性的Gray-Brown法研究[J],固体电子学研究与进展,2022,3:211-214
- [23]王德君.Development of Enhancement-mode GaN MOSFETs on AlGaN/GaN Heterostructure[A],GaN Materials and Application Symposium, CHInano 2013,2022
- [24]王德君.Device isolation for GaN MOSFETs with boron ion implantation[A],ISPlasma 2013(5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials),2022
- [25]王德君.Devices isolation for GaN MOSFETs on AlGaN/GaN heterostructure[A],the 60th JSAP Spring Meeting,2022
- [26]王德君.Effects of Vanadium-compensated Concentration onthe Electrical Characteristics of 6H-SiC Photocon...[A],2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia,2022,1508-1510
- [27]Wang, Qingpeng, Jiang, Ying, Zhang, Jiaqi, Kawaharada, Kazuya, Li, Liuan, 王德君, Ao, Jin-Ping.Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabrica...[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,30(6)
- [28]Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, 秦福文, 王德君.Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Anneali...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,51(8)
- [29]Huang, Lingqin, 秦福文, Li, Shijuan, 王德君.Effects of surface properties on barrier height and barrier inhomogeneities of platinum contact...[J],APPLIED PHYSICS LETTERS,2022,103(3)
- [30]Zhu, Qiaozhi, 秦福文, Li, Wenbo, 王德君.Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance mi...[J],PHYSICA B,2022,432:89-95
- [31]Liu, Bingbing, 秦福文, 王德君.Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-an...[J],APPLIED SURFACE SCIENCE,2022,355:59-63
- [32]李硕, 肇启东, Meng, Dedong, 王德君, Xie, Tengfeng.Fabrication of metallic charge transfer channel between photoanode Ti/Fe2O3 and cocatalyst CoOx...[J],Journal of Materials Chemistry A,2022,4(42):16661-16669
- [33]Jiang, Y., Ohno, Wang, Q. P., Tamai, K., Li, L. A., Shinkai, S., Miyashita, T., Motoyama, S-I, 王德君, Ao, J-P.Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,29(5)
- [34]He, Miao, Du, Shiyu, 王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[A],International Symposium on Advanced Material Research, ISAMR 2017,2022,753 KEM:134-140
- [35]王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[J],KEY ENGINEERING MATERIALS,2022,753:134-140
- [36]Zhang H.P., Qi R.S., 赵维禄, 章恒丰, 刘国华, 王德君, Niu X.Y., 林茂, Xu L.Y..Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer[A],2011 China-Japan Joint Microwave Conference, CJMW 2011,2022,454-457
- [37]徐善国, 张红平, 王德君, 刘国华, Niu, X. Y., 林茂, Xu, L. Y..Forward Block characteristic of a novel RF SOI LDMOS with a Buried P-type layer[A],International Silicon on Insulator (SOI) Conference,2022
- [38]王德君.Forward Block characteristic of a novel SOI LDMOS with a Buried P-type layer[A],2010 IEEE International SOI Conference,2022,88-89
- [39]王德君.GaN MOSFET with Boron Trichloride-Based Dry Recess Process[A],11th APCPST (Asia Pacific Conference on Plasma Science and Technology),2022,66-66
- [40]Jiang, Y., Wang, Q.P., Tamai, K., Miyashita, T., Motoyama, S., 王德君, Ao, J.P., Ohno.GaN MOSFET with boron trichloride-based dry recess process[J],Journal of physics Conference series,2022,441(1)