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    高飞

    • 教授     博士生导师 硕士生导师
    • 主要任职:集成电路学院党委书记
    • 性别:男
    • 毕业院校:大连理工大学
    • 学位:博士
    • 所在单位:集成电路学院
    • 学科:等离子体物理
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    Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

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      发布时间:2019-03-11

      论文类型:期刊论文

      发表时间:2014-11-01

      发表刊物:CHINESE PHYSICS B

      收录刊物:Scopus、ISTIC、EI、SCIE

      卷号:23

      期号:11

      ISSN号:1674-1056

      关键字:inductively coupled plasmas; radio-frequency bias; Langmuir probe; fluid model

      摘要:The inflexion point of electron density and effective electron temperature curves versus radio-frequency (RF) bias voltage is observed in the H mode of inductively coupled plasmas (ICPs). The electron energy probability function (EEPF) evolves first from a Maxwellian to a Druyvesteyn-like distribution, and then to a Maxwellian distribution again as the RF bias voltage increases. This can be explained by the interaction of two distinct bias-induced mechanisms, that is: bias-induced electron heating and bias-induced ion acceleration loss and the decrease of the effective discharge volume due to the sheath expansion. Furthermore, the trend of electron density is verified by a fluid model combined with a sheath module.