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    高飞

    • 教授     博士生导师 硕士生导师
    • 主要任职:集成电路学院党委书记
    • 性别:男
    • 毕业院校:大连理工大学
    • 学位:博士
    • 所在单位:集成电路学院
    • 学科:等离子体物理
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    The effect of F-2 attachment by low-energy electrons on the electron behaviour in an Ar/CF4 inductively coupled plasma

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      发布时间:2019-03-09

      论文类型:期刊论文

      发表时间:2012-04-01

      发表刊物:PLASMA SOURCES SCIENCE & TECHNOLOGY

      收录刊物:Scopus、EI、SCIE

      卷号:21

      期号:2

      ISSN号:0963-0252

      摘要:The electron behaviour in an Ar/CF4 inductively coupled plasma is investigated by a Langmuir probe and a hybrid model. The simulated and measured results include electron density, temperature and electron energy distribution function for different values of Ar/CF4 ratio, coil power and gas pressure. The hybrid plasma equipment model simulations show qualitative agreement with experiment. The effect of F-2 electron attachment on the electron behaviour is explored by comparing two sets of data based on different F atom boundary conditions. It is demonstrated that electron attachment at F-2 molecules is responsible for the depletion of low-energy electrons, causing a density decrease as well as a temperature increase when CF4 is added to an Ar plasma.