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论文类型：会议论文

发表时间：2009-01-01

收录刊物：CPCI-S

卷号：389-390

页面范围：459-+

关键字：Silicon wafers; mechanism; ultra-precision grinding; CMG; XPS; SAGW

摘要：An innovative fixed abrasive grinding process of chemo-mechanical grinding (CMG) by using soft abrasive grinding wheel (SAGW) has been recently proposed to achieve a damage-free ground workpiece surface. The basic principle, ideas and characteristics of CMG with SAGW are briefly introduced in this paper. The CMG experiments using newly developed SAGW for Si wafer are conducted at the condition of dry grinding. The grinding performances are evaluated and analyzed in terms of surface roughness, surface topography and surface/subsurface damage of ground wafer by use of Zygo interferometer, Scanning Electron Microscope (SEM) and Cross-section Transmission Electron Microscope (Cross-section TEM). The component of product of ground Si surface is studied by X-ray Photoelectron Spectroscopy (XPS) to verify chemical reaction between the abrasive / additives of grinding wheel and Si wafer. The CMG process model by using SAGW is developed to understand the material removal mechanism and generation principle of damage-free surface. The study results show that the material removal mechanism of CMG by using SAGW can be explained as a hybrid process of chemical and mechanical action.