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论文类型：会议论文

发表时间：2009-01-01

收录刊物：CPCI-S

卷号：389-390

页面范围：475-480

关键字：Silicon dioxide; Chemical-Mechanical Polishing (CMP); Slurry; adhesion removal

摘要：In the process of CMP SiO(2) ILD, the nano-particle with high surface energy in slurry has an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on the surface of SiO(2) ILD is analysed and adhesion removal model corresponding to that is established. Through cycle polishing experiments, the change of nano-particle size and the state of particle surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which the adhesion removal model is verified.