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论文类型：会议论文

发表时间：2006-01-01

收录刊物：CPCI-S

页面范围：216-220

关键字：laser cleaning; larger-scale silicon wafer; cleaning parameter

摘要：Laser cleaning is an effective cleaning method for removing micro-particle contaminants from the surface of silicon wafer. How to enhance cleaning quality for larger-scale silicon wafer (e.g. 300mm in diameter) without damaging wafer substrate is the challenge of laser cleaning technology. An experimental study was investigated in which laser cleaning parameters has been tested by means of comparable experiments on a KrF laser. The cleaning-test results and their basic cleaning mechanism related to the particle on the wafer surface were examined and analyzed with both analysis software and microscope meter. An optical microscope and a counter program developed on the basis of Mat-lab have evaluated the laser cleaning efficiency for larger-scale silicon wafer. The effects of laser energy, pulse number and laser incident angle on cleaning efficiency were studied. Both cleaning threshold and damage threshold were obtained that are 40mJ/cm(2) and 320mJc/m(2) respectively. The outcomes and discussions provided a deep understanding for laser cleaning theory and application.