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论文类型：期刊论文

发表时间：2010-02-15

发表刊物：APPLIED SURFACE SCIENCE

收录刊物：SCIE、EI

卷号：256

期号：9

页面范围：2691-2699

ISSN号：0169-4332

关键字：MgO single crystal substrate; Chemical mechanical polishing; Chemical etching; Pit

摘要：Magnesium oxide (MgO) single crystal is an important substrate for high temperature superconductor, ferroelectric and photoelectric applications. The function and reliability of these devices are directly affected by the quality of polished MgO surface because any defect on the substrate, such as pit or scratch, may be propagated onto device level. In this paper, chemical mechanical polishing (CMP) experiments were conducted on MgO (1 0 0) substrate using slurry mainly comprised of 1-hydroxy ethylidene-11-diphosphonic acid (HEDP) and silica or ceria particles. Through monitoring the variations of the pits topography on substrate surface, generation and removal mechanism of the pits were investigated. The experimental results indicate that the pits were first generated by an indentation or scratch caused by particles in the slurry. If the rate of chemical etching in the defect area is higher than the material removal rate, the pits will grow. If chemical reaction in the defect area is slower than the material removal rate, the pits will become smaller and eventually disappear. Consequently, these findings may provide insight into strategies for minimizing pits during CMP process. (C) 2009 Elsevier B. V. All rights reserved.