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论文类型：期刊论文

发表时间：2015-01-01

发表刊物：ECS SOLID STATE LETTERS

收录刊物：SCIE、EI、Scopus

卷号：4

期号：7

页面范围：Q29-Q31

ISSN号：2162-8742

摘要：This paper reports the implementation of a low-cost uncooled infrared microbolometer using a standard 0.5-mu m CMOS process, in which the CMOS metal interconnect layers are used as the infrared sensitive material. The CMOS metal interconnect layers are Aluminum, with a TCR of 0.385%/K. Measurements show that the low-cost microbolometer has a thermal conductance of 1.95 x 10(-6) W/K, a thermal time of 3.69 ms, and a dc responsivity of 1536 V/W at 10-Hz chopper frequency. The total measured rms noise of the microbolometer was 0.537 mu V for a 10-kHz bandwidth, resulting in a detectivity D* of 1.0 x 10(9) cmHz(1/2)/W. (C) 2015 The Electrochemical Society. All rights reserved.