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论文类型：期刊论文

发表时间：2011-10-01

发表刊物：CHINESE PHYSICS LETTERS

收录刊物：Scopus、SCIE、ISTIC

文献类型：J

卷号：28

期号：10

ISSN号：0256-307X

摘要：Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method. Under our growth conditions the main doping element is arsenic, which was confirmed by x-ray photoelectroscopy. X-ray diffraction measurements revealed that the p-ZnO:As film was still in the (002) preferred orientation. The Hall test showed that the hole concentration of the p-ZnO: As film was 2.6 x 10(17) cm(-3). The acceptor level was located at 135 meV above the valance band maximum, according to the low-temperature photoluminescence results. We then fabricated a p-ZnO:As/n-Si heterojunction light-emitting device. Its current-voltage curve showed the typical rectifying behavior of a p-n diode. At forward current injections, the electroluminescence peaks, which cover the ultraviolet-to-visible region, could be clearly detected.