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论文类型：期刊论文
发表时间：2006-12-15
发表刊物：APPLIED SURFACE SCIENCE
收录刊物：SCIE、EI、Scopus
卷号：253
期号：4
页面范围：2066-2070
ISSN号：0169-4332
关键字：XRD; annealing atmosphere; grain boundary; oxygen
摘要：ZnO films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Annealing treatments for as-deposited samples were performed in different atmosphere under various pressures in the same chamber just after growth. The effect of annealing atmosphere on the electrical, structural, and optical properties of the deposited films has been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), Hall effect, and optical absorption measurements. The results indicated that the electrical and structural properties of the films were highly influenced by annealing atmosphere, which was more pronounced for the films annealed in oxygen ambient. The most significant improvements for structural and electrical properties were obtained for the film annealed in oxygen under the pressure of 60 Pa. Under the optimum annealing condition, the lowest resistivity of 0.28 Omega cm and the highest mobility of 19.6 cm(2) v(-1) s(-1) were obtained. Meanwhile, the absorbance spectra turned steeper and the optical band gap red shifted back to the single-crystal value. (c) 2006 Elsevier B.V. All rights reserved.