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的个人主页 http://faculty.dlut.edu.cn/kid/zh_CN/index.htm
教授博士生导师硕士生导师
主要任职：集成电路学院院长

论文成果当前位置: 中文主页 >> 科学研究 >> 论文成果

[16]张贺秋, 梁红伟, 胡礼中, 夏晓川, 骆英民.科研资源向教学资源转化的探索和实践[J],教育教学论坛,2018,31(31):145-146
[17]Ye, Xin, Xia, Xiao-Chuan, Li, Zhuo, Zhang, He-Qiu, Du, Guo-Tong, Cui, Xing-Zhu, Liang, Xiao-Hua, Hong-Wei, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle det...[J],CHINESE PHYSICS B,2018,27(8)
[18]Zhu, Zhifu, Shen, Rensheng, Zou, Jijun, Du, Guotong, Zhang, Heqiu, Liang, Hongwei, Tang, Bin, Peng, Xincun, Liu, Jianxun, Yang, Chao, Xia, Xiaochuan, Tao, Pengcheng, HQ, Zou, JJ (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China., East China Univ Technol, Minist Educ, Engn Res Ctr Nucl Technol Applicat, Nanchang 330013, Jiangxi.High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sap...[J],NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2018,893:39-42
[19]Feng, Qiuju, Shi, Xiaochi, Xing, Yan, Li, Tongtong, Fang, Pan, Dezhu, Liang, Hongwei, QJ (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..Thermoelectric microgenerators using a single large-scale Sb doped ZnO microwires[J],JOURNAL OF ALLOYS AND COMPOUNDS,2018,739:298-304
[20]Liu, Jianxun, Du, Guotong, Xia, Xiaochuan, Abbas, Qasim, Yang, Luo, Yingmin, Zhang, Yuantao, Yan, Long, Han, Xu, Liang, Hongwei, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOC...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2018,735:1239-1244
[21]Chen, Yuanpeng, Abbas, Qasim, Liu, Yang, Du, Guotong, Xia, Xiaochuan, Liang, Hongwei, HW (reprint author), Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China..Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al...[J],CRYSTAL GROWTH & DESIGN,2018,18(2):1147-1154
[22]冯秋菊, 石笑驰, 邢研, 李芳, 李彤彤, 潘德柱, 梁红伟, Feng, Q.-J., School of Physics, Electronic Technology, Liaoning Normal UniversityChina, email: qjfeng@dlut.edu.cn.单根锑掺杂ZnO微米线热电发电机的制备及热电性能[J],无机化学学报,2018,34(02):331-336
[23]冯秋菊, Li fang, Li tongtong, Li yunzheng, Shi bo, Li mengke, 梁红伟.Growth and characterization of grid-like beta-Ga2O3 nanowires by electric field assisted chemical...[J],ACTA PHYSICA SINICA,2018,67(21):218101-
[24]Yang, Chao, Du, Guotong, Liang, Hongwei, Zhang, Zhenzhong, Xia, Xiaochuan, Tao, Pengcheng, Chen, Yuanpeng, HeQiu, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3[J],RSC ADVANCES,2018,8(12):6341-6345
[25]Zheng, Xiantong, Wang, Ding, Rong, Xin, Li, Mo, Zhang, Jian, Xinqiang, Liang, Hongwei, Ping, Sun, Xiaoxiao, Chen, Zhaoying, Tao, Sheng, Bowen, Yixin, Ling, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China., Wang, XQ (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871.Effect of indium droplets on growth of InGaN film by molecular beam epitaxy[J],SUPERLATTICES AND MICROSTRUCTURES,2018,113:650-656
[26]Chen, Yuanpeng, Liang, Hongwei, Xia, Xiaochuan, Zhang, Heqiu, Shi, Jianjun, Abbas, Qasim, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China., Liang, Sch Microelect.Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CV...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(19):14341-14347
[27]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Zheng, Xiantong, Yang, Xia, Xiaochuan, Abbas, Qasim, Huang, Huolin, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heter...[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(33):18095-18101
[28]Zhu, Zhi-Fu, Zhang, He-Qiu, Liang, Hong-Wei, Peng, Xin-Cun, Zou, Ji-Jun, Tang, Bin, Du, Guo-Tong, JJ (reprint author), East China Inst Technol, Engn Res Ctr Nucl Technol Applicat, Minist Educ, Nanchang 330013, Jiangxi, Peoples R China., Zhang, HQ (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024.Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-V...[J],CHINESE PHYSICS LETTERS,2017,34(9)
[29]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Yang, Jun, Abbas, Qasim, Shen, Rensheng, Luo, Yingmin, Zhang, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Microelect, Sch Phys, Dalian 116024, Peoples R China..Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Conte...[J],CRYSTAL GROWTH & DESIGN,2017,17(6):3411-3418
[30]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Yang, Xia, Xiaochuan, Huang, Huolin, Tao, Pengcheng, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,60:66-70

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