Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate
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发表时间：2022-10-07
发表刊物：APPLIED PHYSICS LETTERS
所属单位：微电子学院
卷号：104
期号：5
ISSN号：0003-6951