柳阳

个人信息Personal Information

工程师

性别：男

毕业院校：大连理工大学

学位：硕士

所在单位：集成电路学院

电子邮箱：lyang@dlut.edu.cn

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[1]李春野, 梁红伟, 李硕石, 李长鸣, 陈睿姝, 赵涧泽, 柳阳, 杜国同.氢气对ZnO薄膜的结构及光电特性的影响[A],第十一届全国MOCVD学术会议,2022,1
[2]Chen, Yuanpeng, 梁红伟, 夏晓川, 申人升, 柳阳, 骆英民, 杜国同.Effect of growth pressure on the characteristics of beta-Ga2O3 films grown on GaAs (100) substr...[J],APPLIED SURFACE SCIENCE,2022,325(C):258-261
[3]陶鹏程, 杜国同, 梁红伟, 夏晓川, 柳阳, Jiang, Jianhua, Huang, Huishi, 冯秋菊, 申人升, 骆英民.Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6...[J],SUPERLATTICES AND MICROSTRUCTURES,2022,85:482-487
[4]Wang Dong-Sheng, 杜国同, 张克雄, 梁红伟, Song Shi-Wei, Yang De-Chao, 申人升, 柳阳, 夏晓川, 骆英民.Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods[J],Chinese Physics Letters,2022,31(2)
[5]Yang, Dechao, Zhang, Yuantao, 杜国同, 梁红伟, 邱宇, 申人升, 柳阳, 夏晓川, Song, Shiwei, 张克雄, Yu, Zhennan.Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by...[J],APPLIED SURFACE SCIENCE,2022,295:26-30
[6]梁红伟, 申人升, 柳阳, 夏晓川.Fabrication of High-performance 400 nm Violet Light Emitting Diode[J],CHINESE JOURNAL OF LUMINESCENCE（发光学报）,2022,34(2):225-229
[7]梁红伟, 刘远达, 申人升, 柳阳, 夏晓川, 边继明, 杜国同.Ga2O3作载流子阻挡层的n-ZnO/p-GaN异质结发光二极管[A],第五届届全国氧化锌学术会议,2022,34-34
[8]Chen, Yuanpeng, 夏晓川, 梁红伟, Abbas, Qasim, 柳阳, 杜国同.Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al...[J],CRYSTAL GROWTH DESIGN,2022,18(2):1147-1154
[9]Song, Shiwei, 申人升, 梁红伟, 柳阳, 夏晓川, 张克雄, Yang, Dechao, Wang, Dongsheng, 杜国同.Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,24(9):3299-3302
[10]Yang, Dechao, 杜国同, 梁红伟, 邱宇, 申人升, 柳阳, 夏晓川, Song, Shiwei, 张克雄, Yu, Zhennan.Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,25(1):267-272
[11]Li, Chunye, 杜国同, 梁红伟, Zhao, Jianze, 冯秋菊, 边继明, 柳阳, 申人升, Wangcheng, Wu, Guoguang.Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO th...[J],APPLIED SURFACE SCIENCE,2022,256(22):6770-6774
[12]Cheng, Yi, 梁红伟, 柳阳, 夏晓川, 申人升, Song, Shiwei, Wu, Yunfeng, 杜国同.Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2022,16(5,SI):1303-1307
[13]Liu, Yuanda, 夏晓川, 梁红伟, 张赫之, 边继明, 柳阳, 申人升, 骆英民, 杜国同.Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal a...[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,23(2):542-545
[14]Song, Shiwei, 柳阳, 梁红伟, Yang, Dechao, 张克雄, 夏晓川, 申人升, 杜国同.Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ ...[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,24(8):2923-2927
[15]Cai, Xin, 梁红伟, 夏晓川, 申人升, 柳阳, 骆英民, 杜国同.Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MO...[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,26(3):1591-1596
[16]Yang De-Chao, 梁红伟, Song Shi-Wei, 柳阳, 申人升, 骆英民, Zhao Hai-Feng, 杜国同.Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer[J],Chinese Physics Letters,2022,29(8)
[17]Yang, Dechao, 梁红伟, 邱宇, Song, Shiwei, 柳阳, 申人升, 骆英民, 杜国同.Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growt...[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,24(8):2716-2720
[18]梁红伟, Chen, Yuanpeng, 夏晓川, 冯秋菊, 柳阳, 申人升, 骆英民, 杜国同.Influence of Sb valency on the conductivity type of Sb-doped ZnO[J],THIN SOLID FILMS,2022,589:199-202
[19]Liu, Jianxun, 杜国同, 梁红伟, 夏晓川, 柳阳, Jun, Abbas, Qasim, 申人升, 骆英民, Zhang, Yuantao.Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Conte...[J],CRYSTAL GROWTH DESIGN,2022,17(6):3411-3418
[20]张克雄, 骆英民, 杜国同, 梁红伟, 柳阳, 申人升, Guo, Wenping, Wang, Dongsheng, 夏晓川, 陶鹏程, 杨超.Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunnelin...[J],Scientific Reports,2022,4:6322

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