柳阳

个人信息Personal Information

工程师

性别：男

毕业院校：大连理工大学

学位：硕士

所在单位：集成电路学院

电子邮箱：lyang@dlut.edu.cn

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[1]张克雄, 梁红伟, Song, Shiwei, Yang, Dechao, 申人升, 柳阳, 夏晓川, 骆英民, 杜国同.Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates[J],JOURNAL OF TESTING AND EVALUATION,2022,41(5):798-803
[2]Cai, Xin, 梁红伟, Liu, Yuanda, 申人升, 夏晓川, 柳阳, Ling, C. C., 杜国同.Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by...[J],CHEMICAL PHYSICS LETTERS,2022,579:90-93
[3]申人升, 柳阳, 张希珍, Lin W., 程传辉, 张扬, 杜国同, 齐良.Study on sensing properties of a temperature-independent high pressure sensor base on tapered FBG[A],International Symposium on Photonics and Optoelectronics, SOPO 2010,2022
[4]夏晓川, 梁红伟, Geng, Xinlei, Chen, Yuanpeng, 杨超, 柳阳, 申人升, Xu, Mengxiang, 杜国同.Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,28(3):2598-2601
[5]刘建勋, 梁红伟, 夏晓川, 黄火林, 柳阳, 申人升, 骆英民, 杜国同.含InGaN插入层的非故意掺杂高阻GaN的外延生长和特性研究[A],第一届全国宽禁带半导体学术及应用技术会议,2022,28-29
[6]Yunjie Ke, 张克雄, 杜国同, 柯昀洁, 梁红伟, 申人升, Shiwei Song, 宋世巍, 夏晓川, 柳阳.喷淋头高度对InGaN/GaN量子阱生长的影响[A],第十七届全国化合物半导体材料微波器件和光电器件学术会议,2022,65-68
[7]柯昀洁, 梁红伟, 申人升, 宋世巍, 夏晓川, 柳阳, 张克雄, 杜国同.喷淋头高度对InGaN/GaN量子阱生长的影响[J],发光学报,2022,4:469-473
[8]杜国同, 柳阳, 柳杨, Shiwei Song, 宋世巍, Xin Dong, 董鑫, 张克雄, 蔡旭浦, Xupu Cai, Yuantao Zhang, Baolin Zhang, 张源涛, Guoguang Wu, 吴国光, Wang Zhao, 赵旺, 夏晓川, 梁红伟.基于InN和ZnO纳米结构材料的电致发光器件[A],第十七届全国化合物半导体材料微波器件和光电器件学术会议,2022,334-335
[9]申人升, qilin, 柳阳, 张笑, 张玉书, 杜国同.基于Tapered FBG温度不敏感的高压传感器[A],全国第14次光纤通信暨第15届集成光学学术会议,2022,333-335
[10]申人升, 柳阳, 杜国同.基于tapered FBG温度不敏感的高压传感器[J],光电子激光,2022,21(suppl.):34-36
[11]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Abbas, Qasim, Yang, Luo, Yingmin, Zhang, Yuantao, Yan, Long, Han, Xu, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOC...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2018,735:1239-1244
[12]Chen, Yuanpeng, Xia, Xiaochuan, Liang, Hongwei, Abbas, Qasim, Du, Guotong, Liu, Yang, HW (reprint author), Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China..Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al...[J],CRYSTAL GROWTH & DESIGN,2018,18(2):1147-1154
[13]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Zheng, Xiantong, Yang, Xia, Xiaochuan, Abbas, Qasim, Huang, Huolin, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heter...[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(33):18095-18101
[14]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Yang, Jun, Abbas, Qasim, Shen, Rensheng, Luo, Yingmin, Zhang, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Microelect, Sch Phys, Dalian 116024, Peoples R China..Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Conte...[J],CRYSTAL GROWTH & DESIGN,2017,17(6):3411-3418
[15]Liu, Jianxun, Liang, Hongwei, Yang, Xia, Xiaochuan, Huang, Huolin, Tao, Pengcheng, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,60:66-70
[16]Xia, Xiaochuan, Yang, Chao, Liu, Yang, Shen, Rensheng, Xu, Mengxiang, Du, Guotong, Liang, Hongwei, Geng, Xinlei, Chen, Yuanpeng, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(3):2598-2601
[17]Liang, Hongwei, Du, Guotong, Tao, Pengcheng, Xia, Xiaochuan, Chen, Yuanpeng, Zhang, Kexiong, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(3)
[18]Tao, Pengcheng, Luo, Yingmin, Zhang, Yuantao, Liu, Jianxun, Zhu, Zhifu, Yang, Shen, Rensheng, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Chen, Yuanpeng, Yang, Chao, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,41:291-296
[19]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Li, Binghui, Yang, Xia, Xiaochuan, Huang, Huolin, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD[J],RSC ADVANCES,2016,6(65):60068-60073
[20]Liang, Hongwei, Shen, Rensheng, Liu, Yang, Luo, Yingmin, Du, Guotong, Chen, Yuanpeng, Xia, Xiaochuan, Zhang, Chao, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,39:582-586

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