Effect of growth pressure on the characteristics of beta-Ga2O3 films grown on GaAs (100) substrates by MOCVD method
点击次数:
发表时间:2022-10-02
发表刊物:APPLIED SURFACE SCIENCE
卷号:325
期号:C
页面范围:258-261
ISSN号:0169-4332
点击次数:
发表时间:2022-10-02
发表刊物:APPLIED SURFACE SCIENCE
卷号:325
期号:C
页面范围:258-261
ISSN号:0169-4332