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发表时间：2022-10-07

发表刊物：发光学报

期号：3

页面范围：340-344

ISSN号：1000-7032

摘要：GaN-based light emitting diodes (LEDs) were grown on the sapphire substrates with different bow values by low pressure metal organic chemical vapor deposition (MOCVD). LED chips were fabricated and the optic and electronic parameters were characterized. The influence of different bow values on the performances of LED was investigated. The analysis results show that the substrates with bow could relax part of the stress in the epilayer beforehand, which improved the quality of epilayer. Hence, the performances of the LED chips got better. During the growth of LEDs, the InGaN material in the active layer suffered the compressive stress that resulted from the underneath GaN layer. With the increase of bow values, the compressive stress that acted on the InGaN material decreased, which leads to the blue shift of the dominant wavelength.

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