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发表时间：2022-10-04

发表刊物：发光学报

期号：6

页面范围：744-747

ISSN号：1000-7032

摘要：The green light emitting diode (LED) with an insertion layer between the multiple quantum wells and n-GaN layer was grown on c-plane sapphire substrate by metal organic chemical vapor deposition. The structural and optical properties of the LEDs with and without insertion layer were investigated. It is found that the insertion layer can promote the combination of In concentration, and induce an overall red-shift of wavelength. We speculate that the In phase separation and piezoelectric field would be responsible for the wavelength red-shift, the performance of LED deteriorated either.

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