Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition
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发表时间：2022-10-03
发表刊物：CRYSTAL GROWTH DESIGN
卷号：17
期号：6
页面范围：3411-3418
ISSN号：1528-7483