点击次数：

论文类型：期刊论文

发表时间：2016-01-01

发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物：SCIE、EI

卷号：41

页面范围：291-296

ISSN号：1369-8001

关键字：SiC; AlGaN; SiNx interlayer; Metal organic chemical vapor deposition

摘要：The crystal quality and stress state of Al0.5Ga0.5N epitaxial layers on 6H-SiC wafers by introducing an in-situ deposited SiN, nanomask layer grown by metal-organic chemical vapor deposition (MOCVD) were investigated. A SiN, interlayer with various growth times was inserted to the Al0.5Ga0.5N epilayers. The full width at half maximum (FVVHM) of X-ray diffraction peaks and the density of etch pits decreased dramatically by the SiN, interlayer, indicating an improved crystalline quality. Also, it was found that the crack density and biaxial tensile stress in the Al0.5Ga0.5N film was significantly reduced by in situ SiN, interlayer from optical microscopy, photoluminescence spectra and Raman spectra. Finally, a crack-free 1.8 mu m thick Al0.5Ga0.5N epilayer grown on 6H-SiC substrate using the optimized SiN, interlayer growth time was obtained. (C) 2015 Elsevier Ltd. All rights reserved.