柳阳

个人信息Personal Information

工程师

性别:男

毕业院校:大连理工大学

学位:硕士

所在单位:集成电路学院

电子邮箱:lyang@dlut.edu.cn

扫描关注

论文成果

当前位置: 中文主页 >> 科学研究 >> 论文成果

Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition

点击次数:

论文类型:期刊论文

发表时间:2014-11-01

发表刊物:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物:SCIE、EI

卷号:27

页面范围:841-845

ISSN号:1369-8001

关键字:Distributed Bragg reflectors; Silicon carbide; Ultraviolet; Metal-organic chemical vapor deposition

摘要:Crack-free AlGaN/GaN distributed Bragg reflectors (DBRs) for the near-UV region were grown on 6E-SiC substrates by metal-organic chemical vapor deposition (MOCVD). To suppress the generation of cracks, a thin SiNx interlayer was introduced between the first pair of AlGaN/GaN DBR layers. Using this approach, crack-free 30-pair Al0.2Ga0.8N/GaN DBRs were obtained with peak reflectivity of 92.8% at 388 nm and a stop-band bandwidth of 16 nm. Our results reveal that a SiNx interlayer not only decreased the tensile strain but also improved the reflectivity via suppression of cracks. (C) 2014 Elsevier Ltd. All rights reserved.