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论文类型：期刊论文

发表时间：2014-08-01

发表刊物：CHEMICAL RESEARCH IN CHINESE UNIVERSITIES

收录刊物：SCIE、ISTIC

卷号：30

期号：4

页面范围：556-559

ISSN号：1005-9040

关键字：Patterned sapphire substrate; GaN; Selective growth; Crystallographic plane

摘要：Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition. A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat, and the distribution morphology of GaN had significantly changed after it was recrystallized. GaN selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level.