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论文类型：期刊论文

发表时间：2014-01-01

发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录刊物：SCIE、EI

卷号：25

期号：1

页面范围：267-272

ISSN号：0957-4522

摘要：GaN epilayer was grown on a new polyhedral patterned sapphire substrate (new PSS) by metal-organic chemical vapor deposition. The new PSS was prepared by combining the dry etching technique and wet etching technique. The X-ray diffraction indicated that the full width at half maximum values of (0002) and () diffraction peaks in the GaN epilayer grown on the new PSS were evidently smaller than that in the GaN epilayer grown on the normal treated PSS. The improvement of GaN quality was attributed to the reduction of threading dislocations (TDs) in GaN epilayer, and the mechanism of the reduction of TDs was analyzed. The influence of the new PSS on the optical properties as well as the residual stress in GaN epilayer was also discussed.