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论文类型：期刊论文

发表时间：2013-08-01

发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录刊物：EI、SCIE

卷号：24

期号：8

页面范围：2716-2720

ISSN号：0957-4522

摘要：GaN epilayers with porous SiNx interlayer and changed growth modes were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. Comparing with GaN epilayer grown by ordinary method, the crystalline qualities were significantly improved. The improvement was attributed to the reduction of the density of threading dislocations causing by over-growth process combining with delayed coalescence of individual GaN islands. The influence of the deposition and annealing of nucleation layer on the GaN regrowth was also discussed.