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发布期刊链接：http://ieeexplore.ieee.org/abstract/document/6804693/keywords

发表时间：2015-04-06

发表刊物：IEEE TRANSACTIONS ON POWER ELECTRONICS

收录刊物：SCI、EI

学科门类：工学

一级学科：机械工程

卷号：30

期号：3

页面范围：1535-1543

关键字：Temperature measurement, Insulated gate bipolar transistors, Fatigue, Current measurement, Heating,

摘要：This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12