点击次数：

论文类型：期刊论文

发表时间：2015-05-01

发表刊物：IEEE TRANSACTIONS ON POWER ELECTRONICS

收录刊物：SCIE、EI、Scopus

卷号：30

期号：5,SI

页面范围：2493-2504

ISSN号：0885-8993

关键字：Aging; fatigue; finite-element (FE) methods; insulated-gate bipolar transistors (IGBTs); multiobjective; optimization methods; power cycling (PC); reliability; thermal cycling (TC)

摘要：Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power conversion applications where their reliability is of significant concern. Standard IGBT modules are fabricated for general-purpose applications while little has been designed for bespoke applications. However, conventional design of IGBTs can be improved by the multiobjective optimization technique. This paper proposes a novel design method to consider die-attachment solder failures induced by short power cycling and baseplate solder fatigue induced by the thermal cycling which are among major failure mechanisms of IGBTs. Thermal resistance is calculated analytically and the plastic work design is obtained with a high-fidelity finite-element model, which has been validated experimentally. The objective of minimizing the plastic work and constrain functions is formulated by the surrogate model. The nondominated sorting genetic algorithm-II is used to search for the Pareto-optimal solutions and the best design. The result of this combination generates an effective approach to optimize the physical structure of power electronic modules, taking account of historical environmental and operational conditions in the field.