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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2011-07-15

发表刊物：ELECTROCHIMICA ACTA

收录刊物：EI、SCIE、Scopus

卷号：56

期号：18

页面范围：6277-6283

ISSN号：0013-4686

关键字：Galvanic deposition; Supporting electrolyte; Cu2O; Octahedral

摘要：The effects of introduced supporting electrolyte on the galvanic deposition of Cu2O crystals have been investigated using scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), X-ray diffraction (XRD). The results show that the chemical nature of supporting electrolytes plays very important roles in the galvanic deposition of Cu2O crystals. The chloride stabilizes the (1 0 0) planes of Cu2O crystals, resulting in the formation of cubic crystals, while nitrate, sulfate and fluoride stabilize the (1 1 1) planes of Cu2O crystals, leading to the deposition of truncated octahedral and octahedral Cu2O crystals. It provides a facile way to control the morphology of galvanically obtained Cu2O crystals by indirectly adjusting the inorganic adsorption agents. (C) 2011 Elsevier Ltd. All rights reserved.