王立达
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论文类型:期刊论文
发表时间:2011-07-15
发表刊物:ELECTROCHIMICA ACTA
收录刊物:Scopus、SCIE、EI
卷号:56
期号:18
页面范围:6277-6283
ISSN号:0013-4686
关键字:Galvanic deposition; Supporting electrolyte; Cu2O; Octahedral
摘要:The effects of introduced supporting electrolyte on the galvanic deposition of Cu2O crystals have been investigated using scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), X-ray diffraction (XRD). The results show that the chemical nature of supporting electrolytes plays very important roles in the galvanic deposition of Cu2O crystals. The chloride stabilizes the (1 0 0) planes of Cu2O crystals, resulting in the formation of cubic crystals, while nitrate, sulfate and fluoride stabilize the (1 1 1) planes of Cu2O crystals, leading to the deposition of truncated octahedral and octahedral Cu2O crystals. It provides a facile way to control the morphology of galvanically obtained Cu2O crystals by indirectly adjusting the inorganic adsorption agents. (C) 2011 Elsevier Ltd. All rights reserved.